Specific Applications of Green Silicon Carbide (GC) Micropowder in the Semiconductor Industry
The semiconductor industry’s core requirements for green silicon carbide (GC) micropowder ： high purity, low magnetic, low iron and minimal heavy-metal impurities.
Below are the specific applications of green silicon carbide (GC) micropowder currently utilized in the semiconductor industry:
I. Coarse Grinding and Thinning of Wafers and Substrates
1. Silicon-based Wafers (8-inch/12-inch): Backside thinning, double-sided grinding, and edge chamfering.
Used for coarse thinning after slicing to achieve a target thickness and remove the damage layer caused by wire-sawing. It is applied either with cast-iron grinding plates or in the form of GC-coated abrasive films/polishing belts.
2. Third-Generation Semiconductor Substrates (Silicon Carbide – SiC)
Used for coarse grinding, shaping, and edge chamfering of SiC ingots after slicing. High-purity, low-magnetic GC is required to prevent impurities from causing epitaxial defects. Note: Due to the extreme hardness of SiC substrates, ultra-fine GC micropowder is used for pre-processing, while diamond-based systems are typically employed for fine polishing.
3. Aluminum Nitride (AlN) Ceramic Carriers and Packaging Substrates
Used for the coarse thinning, flattening, and edge chamfering of AlN ceramic substrates for optical chips, COB (Chip-on-Board) packaging, and RF (radio frequency) chips. The self-sharpening characteristics of green silicon carbide (GC) are well-suited for processing these hard, brittle ceramics.
4. Substrates for GaAs (Gallium Arsenide) and InP (Indium Phosphide) Optical Communication Chips
Processes include cutting, rough grinding, and shaping of compound semiconductor substrates, with strict impurity control to prevent contamination of the epitaxial layer.
5. Sapphire Substrates (for LED, Mini/Micro LED)
Processes include rough thinning of sapphire blanks, double-sided grinding, and chamfering to remove damage layers caused by cutting.
II. Consumables for Fixed-Abrasive Grinding
1. Green Silicon Carbide (GC) abrasive films, polishing belts, flocked abrasive discs, and flexible resin-bonded abrasive discs.
2. Green Silicon Carbide (GC) abrasive slurries and free-abrasive lapping fluids.
3. Ceramic/resin-bonded whetstones and dressing blocks, used for conditioning grinding plates and polishing pads.
III. Thermal Management Materials for Semiconductor Packaging
1. AlSiC (Aluminum Silicon Carbide) Heat-Dissipating Substrates
Utilizing Green Silicon Carbide (GC) micropowder as a reinforcing aggregate for preforms, these materials offer high thermal conductivity and low thermal expansion. Their Coefficient of Thermal Expansion (CTE) matches that of silicon chips and AlN (Aluminum Nitride) ceramics. They are used as base substrates for IGBTs, SiC power modules, RF power amplifiers, and high-power optical chip packages.
2. Thermally Conductive, Electrically Insulating Potting Compounds and Thermal Pads
Epoxy or silicone-based systems infused with Green Silicon Carbide (GC) micropowder provide both electrical insulation and thermal conductivity. Used in the packaging of power devices and energy storage modules, they serve as an alternative to aluminum oxide (black silicon carbide is electrically conductive and therefore unsuitable).
3. Thermally conductive fillers for chip underfill; wear-resistant protective coatings for motor modules.
IV. Structural Ceramics and Semiconductor Tooling/Fixtures
1. SiC (Silicon Carbide) Structural Ceramics (Vacuum Chucks, Ceramic Jigs, Ceramic Suction Tables)
Green Silicon Carbide (GC) powder is used as a sintering raw material to produce ceramic vacuum chucks and positioning fixtures for semiconductor applications. It is also used for the grinding and processing of the formed ceramic components.
2. Sandblasting/cleaning services for coated graphite carriers and graphite fixtures. Low-magnetic green silicon carbide (GC) abrasive is used for sandblasting to remove residues of metallic coatings, ensuring no contamination to wafers or optical chips.
V. MEMS, Optoelectronics, and Piezoelectric Crystal Sectors
1. Coarse thinning and edge chamfering of lithium niobate (LiNbO₃) and lithium tantalate (LiTaO₃) electro-optic modulator wafers, as well as quartz MEMS resonators (for silicon photonics and electro-optic chips).
2. Coarse grinding of piezoelectric ceramic and PZT (lead zirconate titanate) ceramic substrates.
In summary, the applications of green silicon carbide (GC) micropowder in the semiconductor industry include: coarse thinning and grinding of silicon wafers, SiC substrates, AlN ceramic substrates, and GaAs/sapphire substrates; production of specialized GC-based abrasive films and slurries for semiconductor processing; use as a filler in the fabrication of AlSiC heat-dissipation substrates for power modules and in thermally conductive, electrically insulating encapsulants; sandblasting for cleaning graphite tooling used in coating processes; and the rough machining of MEMS components and lithium niobate electro-optic wafers.