The Development History of Silicon Carbide
Silicon Carbide is a kind of carbide accidentally discovered by the American Acheson in the 1891 fused diamond experiment. It was mistaken for a mixture of diamonds at that time. Therefore, it was named Emery. In 1893, Acheson came out. The method of industrially smelting silicon carbide, commonly known as the Acheson furnace, has been used until now, with carbonaceous material as the core of the resistance furnace, energized heat the mixture of quartz SIO2 and carbon to form silicon carbide.
Several events about silicon carbide
1905 The first time silicon carbide was found in meteorites.
In 1907, the first silicon carbide crystal light-emitting diode was born.
In 1955, a significant breakthrough in theory and technology, LELY proposed growing high-quality carbonization, and since then, SiC has been regarded as an essential electronic material.
1958 The first World Silicon Carbide Conference was held in Boston for academic exchanges.
1978 In the 1960s and 1970s, silicon carbide, was mainly studied by the former Soviet Union. By 1978, the grain purification method of “LELY improved technology” was first adopted.
From 1987 to the present, the silicon carbide production line was established with CREE’s research results, and suppliers began to provide commercial silicon carbide substrates.