Specific application of green silicon carbide in the fiber-optic communication equipment industry
Due to its unique physical and chemical properties, green silicon carbide is mainly used in the high-precision processing of core components and the manufacturing of semiconductor devices in the fiber-optic communication equipment industry. The specific application scenarios are as follows:
1. Support for semiconductor device manufacturing
Precision grinding of wafer surface
Green silicon carbide powder is used for cutting and grinding of semiconductor wafers (such as silicon, potassium arsenide, and quartz crystals). Its high hardness and precise particle size control can effectively remove the damaged layer on the surface of the wafer and achieve submicron flatness, laying the foundation for processes such as lithography and etching. This is crucial to the reliability of optical chips and integrated circuits in fiber-optic communication equipment.
Substrate processing of electronic components
High-purity green silicon carbide can be used as a semiconductor material to directly manufacture electronic components such as diodes and transistors. Its high thermal conductivity and stability improve the performance of the device in high-speed signal processing and are suitable for driving circuits in optical modules.
2. Optimization of optical fiber component processing
Polishing of optical components
Green silicon carbide powder is used for ultra-precision polishing of optical components such as optical fiber connector end faces, lenses, and prisms. By controlling the surface roughness, it reduces the scattering loss of optical signals and ensures the low transmission attenuation characteristics of optical fiber communication.
Manufacturing of ceramic structural parts
In optical transceiver modules, green silicon carbide ceramics are used as laser packaging bases and heat dissipation components due to their high temperature resistance and corrosion resistance to ensure signal stability in high temperature environments.
3. Enhanced performance of communication equipment
Enhanced heat dissipation of high-frequency devices
Green silicon carbide substrates (such as semi-insulating SiC substrates) support gallium nitride (GaN) epitaxial growth and are used to manufacture high-frequency devices such as 5G base station RF power amplifiers. Their high thermal conductivity significantly improves heat dissipation efficiency and reduces performance degradation caused by overheating of equipment.
Application of power conversion modules
Green silicon carbide power devices (such as SiC MOSFET) are used in communication power systems to reduce energy loss through efficient power conversion and improve the energy efficiency of facilities such as data centers and base stations.
Key features and industry value
| Features | Application value |
| High hardness | Realize nano-level precision processing of wafers/optical components and reduce device defect rate |
| Excellent thermal conductivity | Solve the heat dissipation bottleneck of high-frequency devices and extend equipment life |
| Chemical stability | Tolerate corrosive process environment and ensure the yield rate of semiconductor manufacturing |
| Controllable electrical performance | Directly used in high-reliability semiconductor devices to support the efficiency of optical communication signal processing |
Green silicon carbide has become a key material support for the high performance and miniaturization of optical fiber communication equipment by improving the processing accuracy, heat dissipation efficiency and reliability of core components. Especially in scenarios such as 5G base stations and data center optical modules, its technical advantages are directly related to system energy efficiency and signal quality.